طراحی، شبیه‌سازی و ساخت سوئیچ خازنی RF MEMSبر روی بستر آلومینا

In this paper, design, analysis and fabrication of a low loss capacitive RF MEMS shunt switch, which made on the coplanar waveguide transmission line and alumina substrate in the frequency band of 40-60 GHz, is presented. The CPW is designed to have 50Ω impedance matching on the alumina substrate. Then the desired switch is designed with appropriate dimensions. Afterward the important parameters are obtained by finite element and full-wave electromagnetic simulations by CoventorWare and HFSS. It is shown that for the designed switch, pull-in voltage is 19.25v, insertion-loss is 0.8dB, return-loss is more than 9.8dB and the isolation is 50dB. At the end, the laboratory sample of designed switch is fabricated on alumina substrate and tested, and the possible parameters are obtained. We concluded that the designed switch has appropriate insertion and return loss and good isolation, and fabricated switch has acceptable properties.